Search results for "Laser crystallization"
showing 2 items of 2 documents
Structure and characteristics of laser crystallized thin amorphous Si films
2011
Abstract Pure amorphous Si thin films deposited on oxidized crystalline Si surface (111) were crystallized by picosecond UV laser pulses. The Raman scattering spectra show that pulse energy of 330 mJ/cm2 is enough to fully crystallize Si film and further increase of the energy does not improve crystallinity. A large grained polycrystalline Si was obtained as revealed by surface analysis. A significant increase in carrier mobility was observed after laser crystallization.
PATTERNED LASER CRYSTALLIZATION OF a-Si
2009
PATTERNED LASER CRYSTALLIZATION OF a-SiThin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.